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74HC125 Datasheet(PDF) 3 Page - ON Semiconductor

No. de Pieza. 74HC125
Descripción  Quad 3−State Noninverting Buffers
Descarga  8 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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74HC125 Datasheet(HTML) 3 Page - ON Semiconductor

   
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout DC Input Voltage, Output Voltage
(Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
(V)
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input Voltage
Vout = VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input Voltage
Vout = 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
VOL
Maximum Low−Level Output
Voltage
Vin = VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIL
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
mA
IOZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
±0.5
±5.0
±10
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).


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