© Semiconductor Components Industries, LLC, 2009

January, 2009 − Rev. 0

Publication Order Number:

BAS21M3/D

1

BAS21M3T5G

High Voltage Switching

Diode

The BAS21M3T5G device is a spin−off of our popular SOT−23

three−leaded device. It is designed for high voltage switching

applications and is housed in the SOT−723 surface mount package.

This device is ideal for low−power surface mount applications where

board space is at a premium.

Features

Rating

Symbol

Value

Unit

Reverse Voltage

250

Vdc

Forward Current

200

mAdc

Peak Forward Surge Current

625

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR−5 Board (Note 1)

Derate above 25°C

265

2.1

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

470

°C/W

Total Device Dissipation

Derate above 25°C

640

5.1

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

195

°C/W

Junction and Storage Temperature

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

250 V

HIGH VOLTAGE

SWITCHING DIODE

Device

Package

ORDERING INFORMATION

BAS21M3T5G

SOT−723

(Pb−Free)

8000/Tape & Reel

SOT−723

CASE 631AA

STYLE 2

MARKING

DIAGRAM

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AM = Specific Device Code

M = Date Code

AM M

1

3

2

1

3

CATHODE

1

ANODE