BC640-16G datasheet(1/4 Pages) ONSEMI

No. de pieza	BC640-16G

Descripción Electrónicos	High Current Transistors

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March, 2007 − Rev. 0

1

Publication Order Number:

BC640/D

BC640, BC640−16

High Current Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

−80

Vdc

Collector-Base Voltage

VCBO

−80

Vdc

Emitter-Base Voltage

VEBO

−5.0

Vdc

Collector Current − Continuous

IC

−0.5

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

2

3

BASE

1

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 14

MARKING DIAGRAMS

BC64

0−16

AYWW

G

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

BC

640

AYWW

G

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