BCX18LT1G datasheet(2/4 Pages) ONSEMI

No. de pieza	BCX18LT1G

Descripción Electrónicos	General Purpose Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BCX18LT1G, PNP BCX19LT1G, NPN

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

BCX19

BCX18

V(BR)CEO

45

25

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IC = 0)

BCX19

BCX18

V(BR)CES

50

30

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

ICBO

−

100

5.0

nAdc

mAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

−

10

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 300 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

hFE

100

70

40

−

600

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.62

Vdc

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.2

Vdc

ORDERING INFORMATION

Device

Specific Marking

Package

Shipping†

BCX18LT1G

T2

SOT−23

(Pb−Free)

3000 / Tape & Reel

BCX19LT1G

U1

SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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