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NST3906DP6T5G Datasheet(PDF) 1 Page - ON Semiconductor |
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NST3906DP6T5G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2008 April, 2008 − Rev. 0 1 Publication Order Number: NST3906DP6/D NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • This is a Pb−Free Device MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −40 V Collector−Base Voltage VCBO −40 V Emitter−Base Voltage VEBO −5.0 V Collector Current − Continuous IC −200 mA Electrostatic Discharge HBM MM ESD Class 2 B THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) PD 240 1.9 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 520 °C/W Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) PD 280 2.2 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 446 °C/W Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) PD 350 2.8 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 357 °C/W Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) PD 420 3.4 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Q1 (1) (2) (3) (4) (5) (6) Q2 NST3906DP6T5G ORDERING INFORMATION http://onsemi.com MARKING DIAGRAM Device Package Shipping† NST3906DP6T5G SOT−963 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOT−963 CASE 527AD PLASTIC 1 2 3 1 5 4 6 F M G G 1 F = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) |
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