TC551001BTRL-70L datasheet(4/13 Pages) TOSHIBA

No. de pieza	TC551001BTRL-70L

Descripción Electrónicos	SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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TC551001BPL/BFL/BFTL/BTRL-70L/85L

Static RAM

SR01020795

4

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC

.

AC Characteristics (Ta = 0 ~ 70

°C, V

DD = 5V±10%)

Read Cycle

Write Cycle

AC Test Conditions

SYMBOL

PARAMETER

TC551001BPL/BFL/BFTL/BTRL

UNIT

-70L

-85L

MIN.

MAX.

MIN.

MAX.

tRC

Read Cycle Time

70

–

85

–

ns

tACC

Address Access Time

–

70

–

85

tCO1

CE1 Access Time

–

70

–

85

tCO2

CE2 Access Time

–

70

–

85

tOE

Output Enable to Output in Valid

–

35

–

45

tCOE

Chip Enable (CE1, CE2) to Output in Low-Z

10

–

10

–

tOEE

Output Enable to Output in Low-Z

5

–

5

–

tOD

Chip Enable (CE1, CE2) to Output in High-Z

–

25

–

30

tODO

Output Enable to Output in High-Z

–

25

–

30

tOH

Output Data Hold Time

10

–

10

–

SYMBOL

PARAMETER

TC551001BPL/BFL/BFTL/BTRL

UNIT

-70L

-85L

MIN.

MAX.

MIN.

MAX.

tWC

Write Cycle Time

70

–

85

–

ns

tWP

Write Pulse Width

50

–

60

–

tCW

Chip Selection to End of Write

60

–

75

–

tAS

Address Setup Time

0

–

0

–

tWR

Write Recovery Time

0

–

0

–

tODW

R/W to Output in High-Z

–

25

–

30

tOEW

R/W to Output in Low-Z

5

–

5

–

tDS

Data Setup Time

30

–

35

–

tDH

Data Hold Time

0

–

0

–

Input Pulse Levels

2.4V/0.6V

Input Pulse Rise and Fall Time

5ns

Input Timing Measurement Reference Level

1.5V

Output Timing Measurement Reference Level

1.5V

Output Load

1 TTL Gate and CL = 100pF

Número de pieza similar - TC551001BTRL-70L

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Toshiba Semiconductor	TC551001BTRL-70L	355Kb / 12P	131,072-WORD BY 8-BIT STATIC RAM 1996-09-02

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TC551001BTRL-70L Datasheet(PDF) 4 Page - Toshiba Semiconductor

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