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BUX39 Datasheet(PDF) 1 Page - Comset Semiconductor

No. de Pieza. BUX39
Descripción  HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Descarga  2 Pages
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Fabricante  COMSET [Comset Semiconductor]
Página de inicio  http://comset.halfin.com
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BUX39 Datasheet(HTML) 1 Page - Comset Semiconductor

   
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NPN BUX39
COMSET SEMICONDUCTORS
1/2
The BUX39 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
IB = 0
90
V
VCBO
Collector-Base Voltage
IE = 0
120
V
VEBO
Emitter-Base Voltage
IC = 0
7
V
VCEX
Collector-Emitter Voltage
VBE = -1.5V
120
V
IC
Collector Current
30
A
ICM
Collector Peak Current
tp = 10ms
40
A
IB
Base Current
6
A
Pt
Total Power Dissipation
@ TC = 25°
120
Watts
TJ
Junction Temperature
200
°C
TStg
Storage Temperature
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, Junction to Case
1.46
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (1)
IC=200 mA
90
-
-
V
VEB0
Emitter-Base Voltage
IC=0A , IE=50 mA
7
-
-
V
ICEO
Collector Cutoff Current
VCE=70 V , IB=0A
-
-
1
mA
VCE= VCEX , VBE= -1.5V
-
-
1
ICEX
Collector Cutoff Current
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
-
-
5
mA
IEBO
Emitter Cutoff Current
VEB=5.0 V, IC=0
-
-
1
mA
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HIIG
GH
H P
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