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TLP541G Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TLP541G
Descripción Electrónicos  Programmable Controllers AC.Output Module Solid State Relay
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP541G Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP541G, TLP542G
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
70
mA
Forward current derating (Ta ≥ 25°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Peak forward voltage (RGK = 27kΩ)
VDRM
400
V
Peak reverse voltage (RGK = 27kΩ)
VRRM
400
V
On
-state current
IT (RMS)
150
mA
On
-state current derating (Ta ≥ 25°C)
∆IT / °C
-2.0
mA / °C
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
-5
V
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-30~100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note)
BVS
2500
Vrms
(Note)
Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
120
Vac
Forward current
IF
10
16
25
mA
Operating temperature
Topr
-30
85
°C
Gate to cathode resistance
RGK
27
33
kΩ
Gate to cathode capacity
CGK
0.01
0.1
µF


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