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TR25 Datasheet(PDF) 1 Page - Transys Electronics |
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TR25 Datasheet(HTML) 1 Page - Transys Electronics |
1 / 3 page TR2.5 SERIES SILICON TRIACS l Sensitive Gate Triacs l 2.5 A RMS l Glass Passivated Wafer l 400 V to 800 V Off-State Voltage l Max IGT of 5 mA (Quadrant 1) MT1 MT2 G TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 100 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TR2.5-400-14 TR2.5-600-14 TR2.5-700-14 TR2.5-800-14 VDRM 400 600 700 800 V Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 2.5 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 12 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 14 A Peak gate current IGM ±0.2 A Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s) PGM 1.3 W Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = rated VDRM IG = 0 TC = 110°C ±1 mA IGTM Peak gate trigger current Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 W RL = 10 W RL = 10 W RL = 10 W tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s 5 -8 -10 25 mA VGTM Peak gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 W RL = 10 W RL = 10 W RL = 10 W tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s 0.9 -1.2 -1.2 1.2 2.5 -2.5 -2.5 V † All voltages are with respect to Main Terminal 1. |
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