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TR25 Datasheet(PDF) 1 Page - Transys Electronics

No. de pieza TR25
Descripción Electrónicos  SILICON TRIACS
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Fabricante Electrónico  TRSYS [Transys Electronics]
Página de inicio  http://www.transyselectronics.com
Logo TRSYS - Transys Electronics

TR25 Datasheet(HTML) 1 Page - Transys Electronics

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TR2.5 SERIES
SILICON TRIACS
l
Sensitive Gate Triacs
l
2.5 A RMS
l
Glass Passivated Wafer
l
400 V to 800 V Off-State Voltage
l
Max IGT of 5 mA (Quadrant 1)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 100 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TR2.5-400-14
TR2.5-600-14
TR2.5-700-14
TR2.5-800-14
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
IT(RMS)
2.5
A
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
12
A
Peak on-state surge current half-sine-wave (see Note 4)
ITSM
14
A
Peak gate current
IGM
±0.2
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
£ 200 m s)
PGM
1.3
W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
TL
230
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
TC = 110°C
±1
mA
IGTM
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
5
-8
-10
25
mA
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
0.9
-1.2
-1.2
1.2
2.5
-2.5
-2.5
V
† All voltages are with respect to Main Terminal 1.


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