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TPS65070 Datasheet(PDF) 5 Page - Texas Instruments

No. de Pieza. TPS65070
Descripción  Single Chip Power Solution for Battery Powered Systems
Descarga  90 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS65070 Datasheet(HTML) 5 Page - Texas Instruments

 
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TPS65070, TPS65072, TPS65073
TPS650731, TPS650732
www.ti.com
SLVS950B – JULY 2009 – REVISED DECEMBER 2009
DCDC1 CONVERTER
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VVINDCDC1
Input voltage range
Connected to SYS pin
2.8
6.3
V
IO
Maximum output
600
mA
VINDCDC1 = 2.8 V
150
300
RDS(ON)
High side MOSFET on-resistance
m
VINDCDC1 = 3.5 V
120
200
ILH
High side MOSFET leakage current
VINDCDC1 = 6.3 V
2
μA
VINDCDC1 = 2.8 V
200
300
RDS(ON)
Low side MOSFET on-resistance
m
VINDCDC1 = 3.5 V
160
180
ILL
Low side MOSFET leakage current
VDS = 6.3 V
1
μA
for TPS65072, TPS65073, TPS650731,
ILIMF
Forward current limit (high and low side MOSFET)
0.8
1.1
1.5
A
TPS650732
ILIMF
Forward current limit (high and low side MOSFET)
for TPS65070
1.1
1.6
2.2
A
fS
Oscillator frequency
1.95
2.25
2.55
MHz
Fixed output voltage range
0.725
3.3
V
Internal resistor divider, I2C selectable
For TPS65070, TPS65072
3.3
Default output voltage
V
For TPS65073, TPS650731, TPS650732
1.8
Vout
VINDCDC1 = VDCDC1 +0.3 V to 6.3 V;
DC output voltage accuracy; PFM mode(1)
–2%
3%
0 mA
≤ IO ≤ 0.6 A
VINDCDC1 = VDCDC1 +0.3 V to 6.3 V;
DC output voltage accuracy; PWM mode(1)
–1.5%
1.5%
0 mA
≤ IO ≤ 0.6 A
ΔVOUT
Power save mode ripple voltage(2)
IOUT = 1 mA, PFM mode
40
mVpp
tStart
Start-up time
Time from active EN to Start switching
170
μs
tRamp
VOUT ramp up time
Time to ramp from 5% to 95% of VOUT
250
μs
Vo -
power good threshold
rising voltage
5%
Vo -
power good threshold
falling voltage
10%
RDIS
Internal discharge resistor at L1
–35%
250
35%
(1)
Output voltage specification does not include tolerance of external voltage programming resistors. Output voltage in PFM mode is
scaled to +1% of nominal value.
(2)
Configuration L= 2.2
μH, COUT = 10 μF
DCDC2 CONVERTER
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VVINDCDC
Input voltage range
Connected to SYS pin
2.8
6.3
V
2
TPS65072/73/731/732
600
IO
Maximum output current
Vin > 2.8 V
mA
TPS65070
1500
VINDCDC2 = 2.8 V
150
300
RDS(ON)
High side MOSFET on-resistance
m
VINDCDC2 = 3.5 V
120
200
ILH
High side MOSFET leakage current
VINDCDC2 = 6.3 V
2
μA
VINDCDC2 = 2.8 V
200
300
RDS(ON)
Low side MOSFET on-resistance
m
VINDCDC2 = 3.5 V
160
180
ILL
Low side MOSFET leakage current
VDS = 6.3 V
1
μA
TPS65072/73/731/732
Forward current limit (high- and low-side
0.8
1.1
1.5
ILIMF
2.8 V < VINDCDC2 < 6.3 V
A
MOSFET)
TPS65070
2.1
2.4
3.5
fS
Oscillator frequency
1.95
2.25
2.55
MHz
Vout
Adjustable output voltage range
External resistor divider
0.6
Vin
V
Vref
Reference voltage
600
mV
Internal resistor divider, I2C
Vout
Fixed output voltage range
0.725
3.3
V
selectable (Default setting)
Copyright © 2009, Texas Instruments Incorporated
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Product Folder Link(s): TPS65070 TPS65072 TPS65073 TPS650731, TPS650732


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