CYStech Electronics Corp.

Spec. No. : C330LA

Issued Date : 2003.04.16

Revised Date :

Page No. : 1/3

1N582XLA

CYStek Product Specification

3.0Amp. Axial Leaded Schottky Barrier Diodes

1N582XLA Series

Features

• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

• Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0

• Low leakage current

• High surge capability

• High temperature soldering: 250°C/10 seconds at terminals

• High reliability

Mechanical Data

• Case: DO-201AD molded plastic.

• Terminals: Axial leads, solderable per MIL-STD-202 method 208

• Polarity: Indicated by cathode band.

• Weight: 1.10 gram

Maximum Ratings and Electrical Characteristics

(

Rating at 25

°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or

inductive load. )

Type

1N5820 1N5821 1N5822

Parameter

Conditions

Symbol

min

typ

max

Units

Repetitive peak reverse

voltage

20

30

40

V

Maximum RMS voltage

14

21

28

V

Maximum DC blocking

voltage

20

30

40

V

Maximum instantaneous

forward voltage

0.475 0.500 0.525

V

Maximum average forward

rectified current

3

A

Peak forward surge current

8.3ms single half sine wave superimposed

on rated load(JEDEC method)

80

A

2

mA

Maximum DC reverse

current

20

mA

Maximum thermal

resistance

40

℃

/w

Diode junction capacitance

f=1MHz and applied 4V reverse voltage

250

pF

Storage temperature

Tstg

-65~+125

℃

Operating temperature

-65~+125

℃

Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle