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TSB1590 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1590 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSB1590 Low Vcesat PNP Transistor 1/1 Version: A09 SOT-23 PRODUCT SUMMARY BVCBO -40V BVCEO -25V IC -1A VCE(SAT) -0.18V @ IC / IB = -500mA / -50mA Features ● Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA ● Complementary part with TSD2444 Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Ordering Information Part No. Package Packing TSB1590CX RF SOT-23 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Collector Power Dissipation PD 225 mW Thermal Resistance, Junction to Ambient RθJA 556 oC/W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -25 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -35V, IE = 0 ICBO -- -- -100 nA Emitter Cutoff Current VEB = -6V, IC = 0 IEBO -- -- -100 nA Collector-Emitter Saturation Voltage IC / IB = -500mA / -50mA *VCE(SAT) -- -0.18 -0.4 V Base-Emitter Saturation Voltage IC / IB = -500mA / -50mA *VBE(SAT) -- -0.9 -1.3 V VCE = -3V, IC = -100mA *hFE 1 120 -- 560 DC Current Transfer Ratio VCE = -3V, IC = -800mA *hFE 2 80 -- -- Transition Frequency VCE =-5V, IC=-50mA, f=100MHz fT -- 150 -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- 15 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Emitter 3. Collector |
Número de pieza similar - TSB1590_1 |
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Descripción similar - TSB1590_1 |
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