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TSC4505CTA3 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC4505CTA3 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSC4505 High Voltage NPN Transistor 1/5 Version: A07 SOT-23 TO-92 PRODUCT SUMMARY BVCEO 400V BVCBO 400V IC 300mA VCE(SAT) 0.1V @ IC / IB = 10mA / 1mA Features ● Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) ● Complementary part with TSA1759 Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC4505CX RF SOT-23 3Kpcs / 7” Reel TSC4505CT B0 TO-92 1Kpcs / Bulk TSC4505CT A3 TO-92 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA SOT-23 0.225 Collector Power Dissipation TO-92 PD 0.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=20ms, Duty≤50% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 400 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 400V, IE = 0 ICBO -- -- 10 uA Collector-Emitter Reverse Current VCE = 300V, REB = 4kΩ ICER -- -- 20 nA Emitter Cutoff Current VEB = 6V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 10mA / 1mA VCE(SAT) -- 0.1 0.5 V Base-Emitter Saturation Voltage IC / IB = 10mA / 1mA VBE(SAT) -- -- 1.5 V DC Current Transfer Ratio VCE = 10V, IC = 10mA hFE 100 -- 270 Transition Frequency VCE =10V, IC=-10mA, f=10MHz fT -- 20 -- MHz Output Capacitance VCB = 10V, IE = 0, f=1MHz Cob -- 7 -- pF Pin Definition: 1. Base 2. Emitter 3. Collector Pin Definition: 1. Emitter 2. Base 3. Collector |
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