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2SJ414 Datasheet(PDF) 1 Page - Sanyo Semicon Device

No. de pieza 2SJ414
Descripción Electrónicos  General-Purpose Switching Device Applications
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
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2SJ414 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SJ414
No. 5367-1/3
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-state resistance.
Low-voltage drive.
Surface mount type device making the following possible.
Reduction in the number of manufacturing processes for 2SJ414-applied equipment.
High density surface mount applications.
Small size of 2SJ414-applied equipment.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--18
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--72
A
Allowable Power Dissipation
PD
Tc=25°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG=±100μA, VDS=0V
±
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±
10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.0
V
Continued on next page.
Ordering number : EN5367
22410QA TK IM TA-0184
SANYO Semiconductors
DATA SHEET
2SJ414
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network


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