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ADP1870ARMZ-0.6-R7 Datasheet(PDF) 4 Page - Analog Devices |
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ADP1870ARMZ-0.6-R7 Datasheet(HTML) 4 Page - Analog Devices |
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4 / 44 page  ADP1870/ADP1871 Rev. 0 | Page 4 of 44 Parameter Symbol Conditions Min Typ Max Unit ADP1870ARMZ-0.6/ ADP1871ARMZ-0.6 (600 kHz) 600 kHz On-Time VIN = 5 V, VOUT = 2 V, TJ = 25°C 500 540 580 ns Minimum On-Time VIN = 20 V, VOUT = 0.8 V 82 110 ns Minimum Off-Time 65% duty cycle (maximum) 340 400 ns ADP1870ARMZ-1.0/ ADP1871ARMZ-1.0 (1.0 MHz) 1.0 MHz On-Time VIN = 5 V, VOUT = 2 V, TJ = 25°C 285 312 340 ns Minimum On-Time VIN = 20 V 60 85 ns Minimum Off-Time 45% duty cycle (maximum) 340 400 ns OUTPUT DRIVER CHARACTERISTICS High-Side Driver Output Source Resistance ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V) 2.25 3 Ω Output Sink Resistance ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω Rise Time2 tr,DRVH VBST − VSW = 4.4 V, CIN = 4.3 nF (see Figure 60) 25 ns Fall Time2 tf,DRVH VBST − VSW = 4.4 V, CIN = 4.3 nF (see Figure 61) 11 ns Low-Side Driver Output Source Resistance ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V) 1.6 2.2 Ω Output Sink Resistance ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω Rise Time2 tr,DRVL VREG = 5.0 V, CIN = 4.3 nF (see Figure 61) 18 ns Fall Time2 tf,DRVL VREG = 5.0 V, CIN = 4.3 nF (see Figure 60) 16 ns Propagation Delays DRVL Fall to DRVH Rise2 ttpdhDRVH VBST − VSW = 4.4 V (see Figure 60) 15.4 ns DRVH Fall to DRVL Rise2 ttpdhDRVL VBST − VSW = 4.4 V (see Figure 61) 18 ns SW Leakage Current ISWLEAK VBST = 25 V, VSW = 20 V, VREG = 5 V 110 μA Integrated Rectifier Channel Impedance ISINK = 10 mA 22 Ω PRECISION ENABLE THRESHOLD Logic High Level VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V 245 285 330 mV Enable Hysteresis VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V 37 mV COMP VOLTAGE COMP Clamp Low Voltage VCOMP(low) From disabled state, release COMP/EN pin to enable device (2.75 V ≤ VREG ≤ 5.5 V) 0.47 V COMP Clamp High Voltage VCOMP(high) (2.75 V ≤ VREG ≤ 5.5 V) 2.55 V COMP Zero Current Threshold VCOMP_ZCT (2.75 V ≤ VREG ≤ 5.5 V) 1.07 V THERMAL SHUTDOWN TTMSD Thermal Shutdown Threshold Rising temperature 155 °C Thermal Shutdown Hysteresis 15 °C Hiccup Current Limit Timing 6 ms 1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure and Figure 61), CGATE = 4.3 nF, and the upper- and lower-side MOSFETs being Infineon BSC042N03MSG. 60 2 Not automatic test equipment (ATE) tested. |
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