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TPS62612YFDT Datasheet(PDF) 2 Page - Texas Instruments

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No. de pieza TPS62612YFDT
Descripción Electrónicos  350-mA, 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER IN LOW PROFILE CHIP SCALE PACKAGING (HEIGHT < 0.4mm)
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

TPS62612YFDT Datasheet(HTML) 2 Page - Texas Instruments

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TPS62619, TPS62612
TPS62615, TPS62616
SLVS936A – NOVEMBER 2009 – REVISED MARCH 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
PACKAGE
PART
OUTPUT
DEVICE
TA
ORDERING(2) (3)
MARKING
NUMBER
VOLTAGE
SPECIFIC FEATURE
CHIP CODE
TPS62619
1.8V
TPS62619YFD
GD
TPS62612
1.5V
TPS62612YFD
NA
-40°C to 85°C
TPS62615
1.2V
TPS62615YFD
NC
TPS62616
2.15V
TPS62616YFD
QD
TPS62617(4)
1.3V
TPS62617YFD
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2)
The YFD package is available in tape and reel. Add a R suffix (e.g. TPS62619YFDR) to order quantities of 3000 parts. Add a T suffix
(e.g. TPS62619YFDT) to order quantities of 250 parts.
(3)
Internal tap points are available to facilitate output voltages in 25mV increments.
(4)
Product preview.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
UNIT
Voltage at VIN, SW(2)
–0.3 V to 7 V
VI
Voltage at FB(2)
–0.3 V to 3.6 V
Voltage at EN, MODE (2)
–0.3 V to VI + 0.3 V
IO
Peak output current
350 mA
Power dissipation
Internally limited
TA
Operating temperature range(3)
–40°C to 85°C
TJ (max)
Maximum operating junction temperature
150°C
Tstg
Storage temperature range
–65°C to 150°C
Human body model
2 kV
ESD rating (4)
Charge device model
1 kV
Machine model
200 V
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
(3)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package
in the application (qJA), as given by the following equation: TA(max)= TJ(max)–(qJA X PD(max)). To achieve optimum performance, it is
recommended to operate the device with a maximum junction temperature of 105°C.
(4)
The human body model is a 100-pF capacitor discharged through a 1.5-k
Ω resistor into each pin. The machine model is a 200-pF
capacitor discharged directly into each pin.
DISSIPATION RATINGS
(1)
POWER RATING
DERATING FACTOR
PACKAGE
RqJA
(2)
RqJB
(2)
TA ≤ 25°C
ABOVE TA = 25°C
YFD-6
125°C/W
53°C/W
800mW
8mW/°C
(1)
Maximum power dissipation is a function of TJ(max), qJA and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = [TJ(max)–TA] / qJA.
(2)
This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).
2
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Product Folder Link(s): TPS62619 TPS62612 TPS62615 TPS62616


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