1N5809CB datasheet(1/3 Pages) MICROSEMI

No. de pieza	1N5809CB

Descripción Electrónicos	VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

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VOIDLESS-HERMETICALLY-SEALED

ULTRAFAST RECOVERY GLASS

RECTIFIERS

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

Copyright

2-25-2008 REV A

S C O T TS DALE DIVISION

1N5807CB thru 1N5811CB

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and

is ideal for high-reliability applications where a failure cannot be tolerated. These industry-

recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts

are hermetically sealed with voidless-glass construction using an internal “Category III”

metallurgical bond.

These devices are also available in surface mount MELF package

configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru

1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speed requirements including standard, fast

and ultrafast device types in both through-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Popular JEDEC registered 1N5807 to 1N5811 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category III” Metallurgical bonds

• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742

• Further screening options are available for JANS in

accordance with MIL-PRF-19500/742 by using a “SP” prefix

• Surface mount equivalents also available in a square end-

cap MELF configuration with “US” suffix (see separate data

sheet for 1N5807CBUS thru 1N5811CBUS)

• Ultrafast recovery 6 Amp rectifier series 50 to 150 V

• Military and other high-reliability applications

• Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power

capability

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65oC to +175oC

• Storage Temperature: -65oC to +175oC

• Average Rectified Forward Current (I

O): 6 A @ TL = 75ºC

at 3/8 inch lead length (see note 1)

• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)

• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time

• Forward Surge Current (8.3 ms half sine) 125 Amps

• Capacitance: 60 pF at 10 volts, f = 1 MHz

• Solder temperature: 260ºC for 10 s (maximum)

• CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

•

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over Copper.

•

MARKING: Body painted and part number, etc.

•

POLARITY: Cathode indicated by band

•

Tape & Reel option: Standard per EIA-296

•

Weight: 750 mg

•

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

TYPE

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

BREAKDOWN

VOLTAGE

(MIN.)

@ 100

μA

VBR

AVERAGE

RECTIFIED

CURRENT

IO1

@TL=75ºC

(Note 1)

AVERAGE

RECTIFIED

CURRENT

IO2

@TA=55ºC

Note 2

MAXIMUM

FORWARD

VOLTAGE

@ 4 A

(8.3 ms pulse)

VF

REVERSE

CURRENT

(MAX)

@ VRWM

IR

SURGE

CURRENT

(MAX)

IFSM

(NOTE 3)

REVERSE

RECOVERY

TIME (MAX)

(NOTE 4)

trr

VOLTS

AMPS

VOLTS

μA

AMPS

ns

25

oC

100

oC

25

oC 125oC

1N5807CB

1N5809CB

1N5811CB

50

100

150

60

110

160

6.0

3.0

0.875

0.800

5

525

125

30

NOTE 1: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.

NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to

ambient is sufficiently controlled where TJ(max) does not exceed 175ºC

NOTE 3: TA = 25

oC @ I

O = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals

NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min

Número de pieza similar - 1N5809CB

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Microsemi Corporation	1N5809CBUS	166Kb / 3P	SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

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Descripción similar - 1N5809CB

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Microsemi Corporation	1N5807	132Kb / 7P	VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
	1N5802	151Kb / 2P	VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
	JANS1N5811US	131Kb / 7P	VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
	JANS1N5618US	155Kb / 3P	VOIDLESS-HERMETICALLY-SEALED VOIDLESS-HERMETICALLY-SEALED RECOVERY GLASS RECTIFIERS
	1N6661	128Kb / 2P	VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
	1N3611JANTX	226Kb / 5P	VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
	JANTX1N4946	268Kb / 2P	VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
	1N4942	252Kb / 2P	VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
	1N5415	225Kb / 3P	VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
	1N5186	106Kb / 2P	VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

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