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1N4150W Datasheet(PDF) 1 Page - Won-Top Electronics

No. de pieza 1N4150W
Descripción Electrónicos  SURFACE MOUNT FAST SWITCHING DIODE
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Fabricante Electrónico  WTE [Won-Top Electronics]
Página de inicio  http://www.wontop.com
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1N4150W Datasheet(HTML) 1 Page - Won-Top Electronics

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1N4150W / 1N4151W
1 of 2
© 2002 Won-Top Electronics
1N4150W / 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
High Conductance
!
Fast Switching Speed
A
!
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose Switching Application
C
!
Plastic Material – UL Recognition Flammability
D
Classification 94V-O
B
                 
E
Mechanical Data
H
!
Case: SOD-123, Molded Plastic
G
!
Terminals: Plated Leads Solderable per
J
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.01 grams (approx.)
!
Marking: 1N4150W
A4
1N4151W
A5
Maximum Ratings @T
A=25°C unless otherwise specified
Characteristic
Symbol
1N4150W
1N4151W
Unit
Non-Repetitive Peak Reverse Voltage
VRM
50
75
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
V
RMS Reverse Voltage
VR(RMS)
35
V
Forward Continuous Current (Note 1)
IFM
400
300
mA
Average Rectified Output Current (Note 1)
IO
200
150
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
IFSM
4.0
1.0
2.0
0.5
A
Power Dissipation (Note 1)
Pd
410
500
mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
RJA
300
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Electrical Characteristics @T
A=25°C unless otherwise specified
Characteristic
Symbol
1N4150W
1N4151W
Unit
Forward Voltage Drop (Note 4)
VFM
1.0
V
Peak Reverse Leakage Current
@ VR = 50V
IRM
100
50
nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)
Cj
2.5
2.0
pF
Reverse Recovery Time (Note 2, 3)
trr
4.0
2.0
nS
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100
.
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100
.
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA
WTE
POWER SEMICONDUCTORS
SOD-123
Dim
Min
Max
A
3.6
3.9
B
2.5
2.8
C
1.4
1.8
D
0.5
0.7
E
—0.2
G
0.4
H
0.95
1.35
J
—0.12
All Dimensions in mm


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