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1N5398-TB Datasheet(PDF) 1 Page - Won-Top Electronics |
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1N5398-TB Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 3 page 1N5391 – 1N5399 1 of 3 © 2002 Won-Top Electronics 1N5391 – 1N5399 1.5A SILICON RECTIFIER Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability A B A ! High Reliability ! High Surge Current Capability Mechanical Data C ! Case: Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 1N 5391 1N 5392 1N 5393 1N 5395 1N 5397 1N 5398 1N 5399 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current (Note 1) @TA = 75°C IO 1.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage @IF = 1.5A VFM 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 50 µA Typical Junction Capacitance (Note 2) Cj 30 pF Typical Thermal Resistance Junction to Ambient (Note 1) RJA 50 K/W Operating Temperature Range Tj -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C *Glass passivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. WT E PO W E R SEM IC ONDUCTORS DO-15 Dim Min Max A 25.4 — B 5.50 7.62 C 0.71 0.864 D 2.60 3.60 All Dimensions in mm |
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