BC80716-5AZ datasheet(1/1 Pages) ZETEX

No. de pieza	BC80716-5AZ

Descripción Electrónicos	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 – MARCH 2001

PARTMARKING DETAILS

BC80716 –

5AZ

BC80725 –

5BZ

BC80740 –

5CZ

COMPLEMENTARY TYPE

BC817

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-1

A

Continuous Collector Current

IC

-500

mA

Base Current

IB

-100

mA

Peak Base Current

IBM

-200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector Cut-Off

Current

ICBO

-0.1

-0.5

µA

VCB=-20V, IE=0

VCB=-20V, IE=0, Tamb=150°C

Emitter Cut-Off Current IEBO

-10

µA

VEB=-5V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-700

mV

IC=-500mA, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(on)

-1.2

V

IC=-500mA, VCE=-1V*

Static Forward Current

Transfer Ratio

hFE

BC80716

100

250

IC=-100mA, VCE=-1V*

BC80725

160

400

IC=-100mA, VCE=-1V*

BC80740

250

600

IC=-100mA, VCE=-1V*

All bands

40

IC=-500mA, VCE=-1V*

Transition Frequency

fT

100

MHz

IC=-10mA, VCE=-5V

f=35MHz

Output Capacitance

Cobo

8.0

pF

VCB=-10V f=1MHz

*Measured under pulsed conditions.

Spice parameter data is available upon request for these devices

BC807

C

B

E

SOT23

tba

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