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1N4531 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza 1N4531
Descripción Electrónicos  High-speed diodes
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

1N4531 Datasheet(HTML) 3 Page - NXP Semiconductors

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1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.3
1000
mV
IR
reverse current
see Fig.5
IN4531
VR = 20 V
25
nA
VR = 20 V; Tj = 150 °C
50
µA
IN4532
VR = 50 V
100
nA
VR = 50 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
IN4531
4
pF
IN4532
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
IN4531
4
ns
IN4532
2
ns
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
IN4532
4
ns
Vfr
forward recovery voltage
when switched from IF = 100 mA;
tr ≤ 30 ns; see Fig.8
3
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 5 mm
120
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 5 mm; note 1
350
K/W


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