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2N7002KA Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza 2N7002KA
Descripción Electrónicos  N-channel TrenchMOS FET
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2N7002KA Datasheet(HTML) 2 Page - NXP Semiconductors

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2N7002KA_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 25 February 2008
2 of 11
NXP Semiconductors
2N7002KA
N-channel TrenchMOS FET
3.
Ordering information
4.
Limiting values
Table 2.
Ordering information
Type number
Package
Name
Description
Version
2N7002KA
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25
°C ≤ T
j ≤ 150 °C
-
60
V
VDGR
drain-gate voltage (DC)
25
°C ≤ T
j ≤ 150 °C; RGS =20kΩ
-60
V
VGS
gate-source voltage
-
±15
V
VGSM
peak gate-source voltage
tp ≤ 50 µs; pulsed; duty cycle = 25 %
-
±40
V
ID
drain current
Tsp =25 °C; VGS = 10 V; see Figure 2 and 3
-
320
mA
Tsp = 100 °C; VGS = 10 V; see Figure 2
-
200
mA
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
1.28
A
Ptot
total power dissipation
Tsp =25 °C; see Figure 1
-
0.83
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
Source-drain diode
IS
source current
Tsp =25 °C
-
300
mA
ISM
peak source current
Tsp =25 °C; pulsed; tp ≤ 10 µs
-
1.2
A


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