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2PC4617M Datasheet(PDF) 2 Page - NXP Semiconductors |
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2PC4617M Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 2003 Jul 15 2 NXP Semiconductors Product data sheet NPN general purpose transistors 2PC4617M series FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General purpose small signal DC applications • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION NPN general purpose transistor in a SOT883 leadless ultra small plastic package. PNP complement: 2PA1776M series. MARKING TYPE NUMBER MARKING CODE 2PC4617QM D7 2PC4617RM D8 2PC4617SM D9 PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage MAM475 1 2 3 2 1 3 Bottom view Fig.1 Simplified outline (SOT883) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 50 V IC collector current (DC) 100 mA ICM peak collector current 200 mA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C note 1 − 250 mW note 2 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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