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74HCT257DB Datasheet(PDF) 8 Page - NXP Semiconductors

No. de pieza 74HCT257DB
Descripción Electrónicos  Quad 2-input multiplexer; 3-state
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74HCT257DB Datasheet(HTML) 8 Page - NXP Semiconductors

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74HC_HCT257_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 13 January 2010
8 of 17
NXP Semiconductors
74HC257; 74HCT257
Quad 2-input multiplexer; 3-state
[1]
tpd is the same as tPHL, tPLH.
[2]
ten is the same as tPZH, tPZL.
[3]
tdis is the same as tPHZ, tPLZ.
[4]
tt is the same as tTHL, tTLH.
[5]
CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(C
L × VCC
2
× f
o) = sum of outputs.
tt
transition time
see Figure 6
[4]
VCC = 2.0 V
14
60
75
90
ns
VCC = 4.5 V
5
12
15
18
ns
VCC = 6.0 V
4
10
13
15
ns
CPD
power dissipation
capacitance
per multiplexer;
VI = GND to VCC
[5]
45
-
pF
74HCT257
tpd
propagation delay
nl0 to nY or nl1 to nY;
see Figure 6
[1]
VCC = 4.5 V
16
30
38
45
ns
VCC = 5.0 V; CL = 15 pF
13
-
-
ns
S to nY; see Figure 6
VCC = 4.5 V
20
35
44
53
ns
VCC = 5.0 V; CL = 15 pF
17
-
ns
ten
enable time
OE to nY; VCC = 4.5 V;
see Figure 7
[2]
15
30
38
45
ns
tdis
disable time
OE to nY; VCC = 4.5 V;
see Figure 7
[3]
16
30
38
45
ns
tt
transition time
VCC = 4.5 V; see Figure 6
[4]
5
12
15
18
ns
CPD
power dissipation
capacitance
per multiplexer;
VI = GND to VCC
[5]
45
-
pF
Table 7.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8.
Symbol Parameter
Conditions
25
°C
−40 °C to
+85
°C
−40 °C to
+125
°C
Unit
Typ
Max
Max
Max


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