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74HCT257DB Datasheet(PDF) 8 Page - NXP Semiconductors |
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74HCT257DB Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 17 page 74HC_HCT257_5 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 05 — 13 January 2010 8 of 17 NXP Semiconductors 74HC257; 74HCT257 Quad 2-input multiplexer; 3-state [1] tpd is the same as tPHL, tPLH. [2] ten is the same as tPZH, tPZL. [3] tdis is the same as tPHZ, tPLZ. [4] tt is the same as tTHL, tTLH. [5] CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. tt transition time see Figure 6 [4] VCC = 2.0 V 14 60 75 90 ns VCC = 4.5 V 5 12 15 18 ns VCC = 6.0 V 4 10 13 15 ns CPD power dissipation capacitance per multiplexer; VI = GND to VCC [5] 45 - pF 74HCT257 tpd propagation delay nl0 to nY or nl1 to nY; see Figure 6 [1] VCC = 4.5 V 16 30 38 45 ns VCC = 5.0 V; CL = 15 pF 13 - - ns S to nY; see Figure 6 VCC = 4.5 V 20 35 44 53 ns VCC = 5.0 V; CL = 15 pF 17 - ns ten enable time OE to nY; VCC = 4.5 V; see Figure 7 [2] 15 30 38 45 ns tdis disable time OE to nY; VCC = 4.5 V; see Figure 7 [3] 16 30 38 45 ns tt transition time VCC = 4.5 V; see Figure 6 [4] 5 12 15 18 ns CPD power dissipation capacitance per multiplexer; VI = GND to VCC [5] 45 - pF Table 7. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Typ Max Max Max |
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