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74LVC1G57GF Datasheet(PDF) 9 Page - NXP Semiconductors

No. de pieza 74LVC1G57GF
Descripción Electrónicos  Low-power configurable multiple function gate
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Fabricante Electrónico  NXP [NXP Semiconductors]
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74LVC1G57GF Datasheet(HTML) 9 Page - NXP Semiconductors

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74LVC1G57_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 19 July 2007
9 of 17
NXP Semiconductors
74LVC1G57
Low-power configurable multiple function gate
13. Transfer characteristics
[1]
Typical values are measured at Tamb =25 °C.
14. Waveforms transfer characteristics
Table 12.
Transfer characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
VT+
positive-going
threshold voltage
see Figure 14, Figure 15,
Figure 16 and Figure 17
VCC = 1.8 V
0.70
1.02
1.20
0.67
1.20
V
VCC = 2.3 V
1.11
1.42
1.60
1.08
1.60
V
VCC = 3.0 V
1.50
1.79
2.00
1.47
2.00
V
VCC = 4.5 V
2.16
2.52
2.74
2.13
2.74
V
VCC = 5.5 V
2.61
2.99
3.33
2.58
3.33
V
VT−
negative-going
threshold voltage
see Figure 14, Figure 15,
Figure 16 and Figure 17
VCC = 1.8 V
0.30
0.53
0.72
0.30
0.75
V
VCC = 2.3 V
0.58
0.77
1.00
0.58
1.03
V
VCC = 3.0 V
0.80
1.04
1.30
0.80
1.33
V
VCC = 4.5 V
1.21
1.55
1.90
1.21
1.93
V
VCC = 5.5 V
1.45
1.86
2.29
1.45
2.32
V
VH
hysteresis voltage
(VT+ − VT−)
see Figure 14, Figure 15,
Figure 16 and Figure 17
VCC = 1.8 V
0.30
0.48
0.62
0.23
0.62
V
VCC = 2.3 V
0.40
0.64
0.80
0.34
0.80
V
VCC = 3.0 V
0.50
0.75
1.00
0.44
1.00
V
VCC = 4.5 V
0.71
0.97
1.20
0.65
1.20
V
VCC = 5.5 V
0.71
1.13
1.40
0.65
1.40
V
VT+ and VT− limits are at 70 % and 20 %.
Fig 14. Transfer characteristic
Fig 15. Definition of VT+, VT− and VH
mna207
VO
VI
VH
VT+
VT−
mna208
VO
VI
VH
VT+
VT−


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