74LVC2G38GD datasheet(6/16 Pages) NXP

No. de pieza	74LVC2G38GD

Descripción Electrónicos	Dual 2-input NAND gate; open drain

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74LVC2G38_7

Product data sheet

Rev. 07 — 20 March 2009

6 of 16

NXP Semiconductors

74LVC2G38

Dual 2-input NAND gate; open drain

[1]

All typical values are measured at Tamb = 25 °C.

Tamb = −40 °C to +125 °C

VIH

HIGH-level input voltage

VCC = 1.65 V to 1.95 V

0.65

× V

CC

--

V

VCC = 2.3 V to 2.7 V

1.7

-

V

VCC = 2.7 V to 3.6 V

2.0

-

V

VCC = 4.5 V to 5.5 V

0.7

× V

CC

--

V

VIL

LOW-level input voltage

VCC = 1.65 V to 1.95 V

-

0.35

× V

CC

V

VCC = 2.3 V to 2.7 V

-

0.7

V

VCC = 2.7 V to 3.6 V

-

0.8

V

VCC = 4.5 V to 5.5 V

-

0.3

× V

CC

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 100 µA; VCC = 1.65 V to 5.5 V

-

0.1

V

IO = 4 mA; VCC = 1.65 V

-

0.70

V

IO = 8 mA; VCC = 2.3 V

-

0.45

V

IO = 12 mA; VCC = 2.7 V

-

0.60

V

IO = 24 mA; VCC = 3.0 V

-

0.80

V

IO = 32 mA; VCC = 4.5 V

-

0.80

V

II

input leakage current

VI = 5.5 V or GND; VCC =0Vto5.5 V

-

±20

µA

IOFF

power-off leakage current VI or VO = 5.5 V; VCC = 0 V

-

±20

µA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO =0A

--

40

µA

∆ICC

additional supply current

per pin; VI = VCC − 0.6 V; IO =0A;

VCC = 2.3 V to 5.5 V

-

5000

µA

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

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Descripción similar - 74LVC2G38GD

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