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74LVT241DB Datasheet(PDF) 4 Page - NXP Semiconductors |
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74LVT241DB Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 74LVT241_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 7 May 2008 4 of 16 NXP Semiconductors 74LVT241 3.3 V octal buffer/line driver; 3-state 6. Functional description [1] H = HIGH voltage level; L = LOW voltage level; X = Don’t care; Z = High impedance “OFF” state. 7. Limiting values [1] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. [2] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [3] For SO20 packages: above 70 °C derate linearly with 8 mW/K. For SSOP20 and TSSOP20 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN20 packages: above 60 °C derate linearly with 4.5 mW/K. 8. Recommended operating conditions Table 3. Function table Inputs Outputs 1OE 2OE 1An 2An 1Yn 2Yn LH LLLL L HHHHH H L XXZ Z Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).[1] Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V VI input voltage [2] −0.5 +7.0 V VO output voltage output in OFF or HIGH state [2] −0.5 +7.0 V IIK input clamping current VI < 0 V −50 - mA IOK output clamping current VO < 0 V −50 - mA IO output current output in LOW state - 128 mA output in HIGH state −64 - mA Tstg storage temperature −65 +150 °C Tj junction temperature - +150 °C Ptot total power dissipation Tamb = −40 °C to +85 °C [3] - 500 mW Table 5. Recommended operating conditions Symbol Parameter Conditions Min Max Unit VCC supply voltage 2.7 3.6 V VI input voltage 0 5.5 V IOH HIGH-level output current −32 - mA |
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