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BAS35 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS35 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page 2003 Mar 20 4 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1 V IF = 400 mA − 1.25 V IR reverse current see Fig.5 VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 360 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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