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BC546 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BC546 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 17 November 2009 6 of 14 NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors VCE =5V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE =5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C Fig 1. Selection A: DC current gain as a function of collector current; typical values Fig 2. Selection A: Base-emitter voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C IC/IB =10 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C Fig 3. Selection A: Collector-emitter saturation voltage as a function of collector current; typical values Fig 4. Selection A: Base-emitter saturation voltage as a function of collector current; typical values mgt723 10−1 110 102 103 IC (mA) 0 400 300 200 100 hFE (1) (2) (3) mgt724 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBE (mV) (1) (2) (3) 103 102 10 mgt725 10−1 110 102 103 IC (mA) VCEsat (mV) (1) (2) (3) mgt726 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) |
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