BC847BV datasheet(4/8 Pages) NXP

No. de pieza	BC847BV

Descripción Electrónicos	NPN general purpose double transistor

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Fabricante Electrónico	NXP [NXP Semiconductors]

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4 / 8 page

2001 Sep 10

4

NXP Semiconductors

Product data sheet

NPN general purpose double transistor

BC847BV

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

IE = 0; VCB = 30 V

−

15

nA

IE = 0; VCB = 30 V; Tj = 150 °C

−

5

μA

IEBO

emitter-base cut-off current

IC = 0; VEB = 5 V

−

100

nA

hFE

DC current gain

IC = 2 mA; VCE = 5 V

200

−

450

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

655

700

mV

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

100

mV

IC = 100 mA; IB = 5 mA; note 1

−

300

mV

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

755

−

mV

Cc

collector capacitance

IE = Ie = 0; VCB = 10 V; f = 1 MHz

−

1.5

pF

Ce

emitter capacitance

IC = ic = 0; VEB = 500 mV;f = 1 MHz −

11

−

pF

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz 100

−

MHz

handbook, full pagewidth

0

300

100

200

MBH724

10−2

10−1

hFE

1

IC (mA)

10

103

102

VCE = 5 V

Fig.2 DC current gain; typical values.

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