BCV71 datasheet(3/6 Pages) NXP

No. de pieza	BCV71

Descripción Electrónicos	NPN general purpose transistors

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Fabricante Electrónico	NXP [NXP Semiconductors]

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3 / 6 page

1999 Apr 08

3

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BCV71; BCV72

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 20 V

−

100

nA

IE = 0; VCB = 20 V; Tj = 100 °C

−

10

μA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

100

nA

hFE

DC current gain

IC = 10 μA; VCE = 5 V

BCV71

−

90

−

BCV72

−

150

−

DC current gain

IC = 2 mA; VCE = 5 V

BCV71

110

−

220

BCV72

200

−

450

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

120

250

mV

IC = 50 mA; IB = 2.5 mA

−

210

−

mV

VBEsat

base-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

750

−

mV

IC = 50 mA; IB = 2.5 mA

−

850

−

mV

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

550

−

700

mV

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

−

pF

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−

MHz

F

noise figure

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

10

dB

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