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BF723 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BF723
Descripción Electrónicos  PNP high-voltage transistor
Download  6 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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BF723 Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Apr 21
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
BF723
THERMAL CHARACTERISTICS
Note
1.
Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
106
K/W
Rth j-s
thermal resistance from junction to soldering point
note 1
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −200 V
−10
nA
IE = 0; VCB = −200 V; Tj = 150 °C
−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−50
nA
hFE
DC current gain
IC = −25 mA; VCE = −20 V
−50
VCEsat
collector-emitter saturation voltage
IC = −30 mA; IB = −5 mA
−0.6
V
Cre
feedback capacitance
IC = ic = 0; VCE = −30 V; f = 1 MHz
2.5
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
MHz


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