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BF723 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF723 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1999 Apr 21 3 NXP Semiconductors Product data sheet PNP high-voltage transistor BF723 THERMAL CHARACTERISTICS Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 106 K/W Rth j-s thermal resistance from junction to soldering point note 1 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −200 V − −10 nA IE = 0; VCB = −200 V; Tj = 150 °C − −10 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA hFE DC current gain IC = −25 mA; VCE = −20 V −50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA − −0.6 V Cre feedback capacitance IC = ic = 0; VCE = −30 V; f = 1 MHz − 2.5 pF fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz |
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