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BUK7L11-34ARC Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7L11-34ARC Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page BUK7L11-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 7 of 15 NXP Semiconductors BUK7L11-34ARC N-channel TrenchPLUS standard level FET td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -20 - ns tr rise time - 92 - ns td(off) turn-off delay time - 127 - ns tf fall time - 118 - ns LD internal drain inductance measured from contact screw on mounting base to centre of die; Tj =25°C -3.5 - nH measured from drain lead 6 mm from package to centre of die; Tj =25°C -4.5 - nH LS internal source inductance measured from source lead to source bond pad; Tj =25°C -7.5 - nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =30V; Tj =25°C -52 - ns Qr recovered charge - 28 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit |
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