BUK9Y07-30B

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Product data sheet

Rev. 03 — 7 April 2010

7 of 14

NXP Semiconductors

BUK9Y07-30B

N-channel TrenchMOS logic level FET

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Forward transconductance as a function of

drain current; typical values.

Fig 9.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

003aad489

0

20

40

60

80

012

345

(A)

2.9

2.8

5

2.6

2.4

2.2

10

003aad490

0

10

20

30

40

0

2040

6080

(m

Ω)

5

2.4

2.8

2.2

2.9

10

2.6

003aad491

20

40

60

80

100

0

20

406080

(S)

003aad554

0

20

40

60

80

01

23

4

(A)

°C

25

°C