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BUK9Y09-40B Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK9Y09-40B Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page BUK9Y09-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 4 of 14 NXP Semiconductors BUK9Y09-40B N-channel TrenchMOS logic level FET Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 003aac506 0 20 40 60 80 100 0 50 100 150 200 Tmb ( °C) ID (A) Tmb (°C) 0 200 150 50 100 003aab844 40 80 120 Pder (%) 0 003aac485 10 -1 1 10 10 2 10 -3 10 -2 10 -1 1 10 tAL (ms) IAL (A) (1) (2) (3) |
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