BUK9Y19-55B datasheet(6/12 Pages) NXP

No. de pieza	BUK9Y19-55B

Descripción Electrónicos	N-channel TrenchMOS logic level FET

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Fabricante Electrónico	NXP [NXP Semiconductors]

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BUK9Y19-55B_3

Product data sheet

Rev. 03 — 29 February 2008

6 of 12

NXP Semiconductors

BUK9Y19-55B

N-channel TrenchMOS logic level FET

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Sub-threshold drain current as a function of

gate-source voltage

Fig 9.

Forward transconductance as a function of

drain current; typical values

VDS (V)

010

8

46

2

03np29

40

80

120

ID

(A)

0

VGS (V) = 10

6.0

5.0

4.6

4.4

4.2

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

03np28

VGS (V)

315

11

7

20

15

25

30

RDSon

(m

Ω)

10

T

j =25 °C; t p = 300 s

T

j =25 °C; ID =20 A

03ng53

VGS (V)

03

2

1

10−4

10−5

10−2

10−3

10−1

ID

(A)

10−6

min

typ

max

ID (A)

530

25

15

20

10

03np15

20

30

40

gfs

(S)

10

T

j =25 °C;VDS = VGS

T

j =25 °C;VDS =25V

Número de pieza similar - BUK9Y19-55B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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BUK9Y19-55B Datasheet(PDF) 6 Page - NXP Semiconductors

BUK9Y19-55B Datasheet(HTML) 6 Page - NXP Semiconductors

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