BUK9Y22-30B datasheet(8/14 Pages) NXP

No. de pieza	BUK9Y22-30B

Descripción Electrónicos	N-channel TrenchMOS logic level FET

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Fabricante Electrónico	NXP [NXP Semiconductors]

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BUK9Y22-30B

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Product data sheet

Rev. 04 — 7 April 2010

8 of 14

NXP Semiconductors

BUK9Y22-30B

N-channel TrenchMOS logic level FET

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 13. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Tj (°C)

−60

180

120

060

003aab986

1.0

1.5

0.5

2.0

2.5

VGS(th)

(V)

0.0

min

typ

max

003aab987

VGS (V)

03

2

1

10−4

10−5

10−2

10−3

10−1

ID

(A)

10−6

min

typ

max

Tj (°C)

−60

180

120

060

003aab851

1

0.5

1.5

2

a

0

003aac964

9

15

21

27

33

04

8

12

16

VGS (V)

RDSON

(m

Ω)

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