BUK7230-55A_2

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Product data sheet

Rev. 02 — 16 March 2010

3 of 13

NXP Semiconductors

BUK7230-55A

N-channel TrenchMOS standard level FET

Fig 1.

Normalized continuous drain current as a

function of mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

03aa24

40

80

120

(%)

0

0

200

150

50

100

03aa16

40

80

120

(%)

0

03na49

1

10

110

(A)

D.C.

100 ms

10 ms

1 ms

tp = 10

μs

100

μs

T

P

t

T

δ =