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2SK2744 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza 2SK2744
Descripción Electrónicos  Chopper Regulator, DC-DC Converter and Motor Drive Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2744 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK2744
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK2744
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 27 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 50 V)
• Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
50
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
50
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
180
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
95
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC
JEITA
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)


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