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2SK2744 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK2744 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK2744 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK2744 Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: |Yfs| = 27 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 50 V) • Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 50 V Drain-gate voltage (RGS = 20 kΩ) VDGR 50 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 45 Drain current Pulse (Note 1) IDP 180 A Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 95 mJ Avalanche current IAR 45 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.0 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2−16C1B Weight: 4.6 g (typ.) |
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