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MC908QT2MFQE Datasheet(PDF) 34 Page - Freescale Semiconductor, Inc

No. de Pieza. MC908QT2MFQE
Descripción  M68HC08 Microcontrollers
Descarga  168 Pages
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Fabricante  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
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MC908QT2MFQE Datasheet(HTML) 34 Page - Freescale Semiconductor, Inc

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Memory
MC68HC908QY/QT Family Data Sheet, Rev. 6
34
Freescale Semiconductor
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
2.6.2 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
1.
Set the ERASE bit and clear the MASS bit in the FLASH control register.
2.
Read the FLASH block protect register.
3.
Write any data to any FLASH location within the address range of the block to be erased.
4.
Wait for a time, tNVS (minimum 10 μs).
5.
Set the HVEN bit.
6.
Wait for a time, tErase (minimum 1 ms or 4 ms).
7.
Clear the ERASE bit.
8.
Wait for a time, tNVH (minimum 5 μs).
9.
Clear the HVEN bit.
10.
After time, tRCV (typical 1 μs), the memory can be accessed in read mode again.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
CAUTION
A page erase of the vector page will erase the internal oscillator trim values
at $FFC0 and $FFC1.
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.


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