2SK3437

2010-01-29

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

2SK3437

DC-DC Converter, Relay Drive and Motor Drive

Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

V

600

V

Gate-source voltage

±30

V

DC (Note 1)

10

Drain current

Pulse

(Note 1)

30

A

Drain power dissipation (Tc

= 25°C)

80

W

Single pulse avalanche energy

(Note 2)

252

mJ

Avalanche current

10

A

Repetitive avalanche energy (Note 3)

8

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.56

°C/W

Thermal resistance, channel to ambient

83.3

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)