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2SK3466 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3466 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3466 2010-04-06 4 Dynamic input/output characteristics 0 0 20 40 80 60 40 80 120 160 200 RDS (ON) − Tc IDR − VDS Capacitance – VDS Vth − Tc PD − Tc −80 1 3 5 4 −40 0 40 120 160 Common source VDS = 10 V ID = 1 mA Pulse test 80 2 0 Case temperature Tc (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) 0 0 100 200 300 500 400 5 10 15 20 25 Common source ID = 5 A Tc = 25°C Pulse test VDD = 100 V VGS VDS 400 200 0 4 8 12 20 16 −80 1 3 5 4 −40 0 40 120 160 Common source VGS = 10 V Pulse test ID = 5 A 80 1.2 2 0 2.5 10 0 0.3 1 10 3 −0.2 −0.4 −0.6 −1.0 −1.2 Common source Tc = 25°C Pulse test −0.8 0.5 0.1 5 3 1 VGS = 0, −1 V 0.1 10 100 2000 300 0.3 0.5 3 10 100 5 30 5 1 30 50 50 1000 500 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Tc = 25°C |
Número de pieza similar - 2SK3466_10 |
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Descripción similar - 2SK3466_10 |
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