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TPC8012-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TPC8012-H
Descripción Electrónicos  Switching Regulator Applications Switching Regulator Applications
Download  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8012-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPC8012-H
2006-01-17
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.9 A
0.28
0.40
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.9 A
0.65
1.35
S
Input capacitance
Ciss
440
Reverse transfer capacitance
Crss
80
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
260
pF
Rise time
tr
23
Turn-on time
ton
28
Fall time
tf
22
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
73
ns
Total gate charge
(gate-source plus gate-drain)
Qg
11
Gate-source charge 1
Qgs
6
Gate-drain (“Miller”) charge
Qgd
VDD ∼− 160 V, VGS = 10 V,
ID = 1.8 A
5
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
7.2
A
Forward voltage (diode)
VDSF
IDR = 1.8 A, VGS = 0 V
−1.5
V
VDD ∼− 100 V
0 V
VGS
10 V
ID = 0.9 A
VOUT


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