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TPCF8A01 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPCF8A01
Descripción Electrónicos  Notebook PC Applications Portable Equipment Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8A01 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPCF8A01
2007-01-16
1
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8A01
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
• Low forward voltage: VFM(2) = 0.46V(typ.)
Absolute Maximum Ratings
MOSFET (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
3
Drain current
Pulse
(Note 1)
IDP
12
A
Single pulse avalanche energy
(Note 4)
EAS
1.46
mJ
Avalanche current
IAR
1.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
SBD (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
20
V
Average forward current (Note 2a, 6)
IF(AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
7(50Hz)
A
Absolute Maximum Ratings for MOSFET and SBD (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Single-device operation
(Note 3a)
PD (1)
1.35
Drain power
dissipation
(t
= 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (2)
1.12
Single-device operation
(Note 3a)
PD (1)
0.53
Drain power
dissipation
(t
= 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
PD (2)
0.33
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3U1C
Weight: 0.011 g (typ.)
Circuit Configuration
12
3
4
8
7
6
5


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