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TPCF8A01 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8A01 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 9 page TPCF8A01 2007-01-16 1 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) • Low forward voltage: VFM(2) = 0.46V(typ.) Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 3 Drain current Pulse (Note 1) IDP 12 A Single pulse avalanche energy (Note 4) EAS 1.46 mJ Avalanche current IAR 1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ SBD (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating Unit Single-device operation (Note 3a) PD (1) 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.33 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1C Weight: 0.011 g (typ.) Circuit Configuration 12 3 4 8 7 6 5 |
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