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TPC8A02-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8A02-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 8 page TPC8A02-H 2006-11-16 5 10 4.5 VGS = 0 V 5 VGS = 4.5 V VGS = 10 V ID = 4A,8A,16A ID = 4A,8A,16A Ambient temperature Ta (°C) Dynamic input/output characteristics Total gate charge Qg (nC) Ambient temperature Ta (°C) RDS (ON) − Ta Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance − VDS Vth − Ta 0.1 1000 −0.2 0 −1.0 −0.6 −0.4 −0.8 100 1 Common source Ta = 25°C Pulse test 0 12 8 4 −40 −80 160 0 40 80 Common source Pulse test 32 8 16 24 0 0 16 4 8 12 0 VDD = 24 V VGS VDS Common source ID = 16 A Ta = 25°C Pulse test 20 30 40 10 3 2 1 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1 mA Pulse test 100 10000 1000 1 0.1 100 10 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 120 2 0 0 40 80 120 1.2 1.6 160 0.8 0.4 Ambient temperature Ta (°C) PD – Ta (1) (2) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s 10 |
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