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TPC8213-H Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TPC8213-H Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPC8213-H 2006-11-17 6 Single - pulse Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) (2) (3) (4) (1) t=1ms * VDSS max Single-device value at dual operation (note 3b) * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 10ms * Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area rth – tw rth – tw 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 1 10 100 0.1 10 1 0.1 100 ID max (Pulse) * |
Número de pieza similar - TPC8213-H |
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Descripción similar - TPC8213-H |
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