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TPCS8004 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCS8004 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCS8004 2009-09-29 4 0 0.5 1.0 1.5 2.0 3.0 0 4 8 12 16 20 2.5 0.32 0.6 1.3 ID = 2.6 A Common source Ta = 25°C Pulse test Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) −55°C 0 1 2 3 4 5 0 1 2 3 4 5 Ta = 100°C 25°C Common source VDS = 10 V Pulse test RDS (ON) – ID 0 0 1 2 3 4 5 10 20 30 40 Common source Ta = 25°C Pulse test VGS = 3.6 V 3.8 4 4.2 4.4 4.6 4.8 10 8 6 0.05 0.1 0.5 1 5 0.05 0.1 0.3 0.5 1 3 5 15 V Common source Ta = 25°C Pulse test VGS = 10 V 0.3 3 0.05 0.1 0.3 0.5 1 3 5 Common source VDS = 10 V Pulse test Ta = −55°C 25°C 100°C 0.05 0.1 0.5 1 5 7 0.3 3 8 6 0 2 4 6 8 10 Common source Ta = 25°C Pulse test 4.4 4.2 4 3.8 VGS = 3.6 V 4.6 4.8 10 0 1 2 3 4 5 |
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