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TPCS8008-H Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCS8008-H Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCS8008-H 2009-12-09 4 Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) ⎪Yfs⎪ − ID Drain current ID (A) RDS (ON) − ID 0.1 1 1 10 0.1 Common source Ta = 25°C Pulse test VGS = 10 V 10 Common source VDS = 10 V Pulse test 0 4 1 2 3 2 0 10 4 6 8 Ta = −55°C 25 100 0 2.0 0.4 1.2 0.8 1.6 04 20 8 12 16 0.4 Common source Ta = 25°C Pulse test 0.8 ID = 1.7 A 25 0.1 100 1 10 Common source VDS = 10 V Pulse test Ta = −55°C 100 0.1 100 10 1 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS 0 3 1 2 0.4 0 2.0 0.8 1.2 1.6 Common source Ta = 25°C Pulse test VGS = 4 V 4.8 5.2 Common source Ta = 25°C Pulse test 0 5 1 3 2 4 1 0 5 23 4 5.5 8 10 6 4.6 4.4 4.2 10 8 6 5.5 5.2 5 4.8 4.6 4.4 4.2 VGS = 4 V 5 |
Número de pieza similar - TPCS8008-H_09 |
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Descripción similar - TPCS8008-H_09 |
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