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CAT28LV64KA-15T Datasheet(PDF) 4 Page - ON Semiconductor |
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CAT28LV64KA-15T Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 15 page CAT28LV64 http://onsemi.com 4 Table 4. CAPACITANCE (TA = 25°C, f = 1.0 MHz) Symbol Test Max Conditions Units CI/O (Note 5) Input/Output Capacitance 10 VI/O = 0 V pF CIN (Note 5) Input Capacitance 6 VIN = 0 V pF 5. This parameter is tested initially and after a design or process change that affects the parameter. Table 5. D.C. OPERATING CHARACTERISTICS (VCC = 3.0 V to 3.6 V, unless otherwise specified.) Symbol Parameter Test Conditions Limits Units Min Typ Max ICC VCC Current (Operating, TTL) CE = OE = VIL, f = 1/tRC min, All I/O’s Open 8 mA ISBC (Note 6) VCC Current (Standby, CMOS) CE = VIHC, All I/O’s Open 100 mA ILI Input Leakage Current VIN = GND to VCC −1 1 mA ILO Output Leakage Current VOUT = GND to VCC, CE = VIH −5 5 mA VIH (Note 6) High Level Input Voltage 2 VCC + 0.3 V VIL Low Level Input Voltage −0.3 0.6 V VOH High Level Output Voltage IOH = −100 mA 2 V VOL Low Level Output Voltage IOL = 1.0 mA 0.3 V VWI Write Inhibit Voltage 2 V 6. VIHC = VCC − 0.3 V to VCC + 0.3 V. Table 6. A.C. CHARACTERISTICS, READ CYCLE (VCC = 3.0 V to 3.6 V, unless otherwise specified.) Symbol Parameter 28LV64−15 28LV64−20 28LV64−25 Units Min Max Min Max Min Max tRC Read Cycle Time 150 200 250 ns tCE CE Access Time 150 200 250 ns tAA Address Access Time 150 200 250 ns tOE OE Access Time 70 80 100 ns tLZ (Note 7) CE Low to Active Output 0 0 0 ns tOLZ (Note 7) OE Low to Active Output 0 0 0 ns tHZ (Notes 7, 8) CE High to High−Z Output 50 50 55 ns tOHZ (Notes 7, 8) OE High to High−Z Output 50 50 55 ns tOH (Note 7) Output Hold from Address Change 0 0 0 ns 7. This parameter is tested initially and after a design or process change that affects the parameter. 8. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer. |
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