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CAT93C56VI-GT2E Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza CAT93C56VI-GT2E
Descripción Electrónicos  2-Kb Microwire Serial CMOS EEPROM
Download  17 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C56VI-GT2E Datasheet(HTML) 2 Page - ON Semiconductor

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CAT93C56, CAT93C57
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
−65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Note 3)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Block Mode, VCC = 5 V, 25°C
Table 3. D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G – New Product
(VCC = +1.8 V to +5.5 V, TA=−40°C to +125°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply
Current (Write)
fSK = 1 MHz, VCC = 5.0 V
1
mA
ICC2
Power Supply
Current (Read)
fSK = 1 MHz, VCC = 5.0 V
500
mA
ISB1
Power Supply
Current (Standby)
(x8 Mode)
VIN = GND or VCC,
CS = GND ORG = GND
TA = −40°C to +85°C
2
mA
TA = −40°C to +125°C
4
ISB2
Power Supply
Current (Standby)
(x16 Mode)
VIN = GND or VCC, CS =
GND ORG = Float or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
ILI
Input Leakage
Current
VIN = GND to VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
ILO
Output Leakage
Current
VOUT = GND to VCC,
CS = GND
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL1
Input Low Voltage
4.5 V v VCC < 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V v VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8 V v VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8 V v VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V v VCC < 5.5 V,
IOL = 2.1 mA
0.4
V
VOH1
Output High Voltage
4.5 V v VCC < 5.5 V,
IOH = −400 mA
2.4
V
VOL2
Output Low Voltage
1.8 V v VCC < 4.5 V,
IOL = 1 mA
0.2
V
VOH2
Output High Voltage
1.8 V v VCC < 4.5 V,
IOH = −100 mA
VCC − 0.2
V


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